Team > Milton Feng
Milton Feng
University of Illinois at Urbana-Champaign
Phone: (217) 333-8080
Web pages:

  • Ph.D., University of Illinois at Urbana-Champaign, 1979
  • M.S., Electrical Engineering, University of Illinois at Urbana-Champaign, 1976
  • B.S., Electrical Engineering, Columbia University, 1973

Academic Positions:
  • Professor, University of Illinois at Urbana-Champaign, 1991-present
Research Interests:
  • Prof. Feng invented the pseudomorphic HBT (PHBT), “pushed” the transistor speed boundary toward THz, and demonstrated InP PHBTs with the world’s fastest speed performance (> 800 GHz). Prof. Feng, along with Prof. N. Holonyak, Jr., demonstrated the first laser operation of a quantum-well-based light emitting transistor (QWLET), a transistor laser (TL). A transistor laser opens up a rich domain of integrated circuitry and high speed signal processing that involves both electrical and optical signals.

Selected Publications:
  • Yu-Ju Chuang, K. Cimino, M. Stuenkel, W. Snodgrass, and M. Feng, "Radio-Frequency-Noise Characterization and Modeling of Type II InP-GaAsSb DHBT," IEEE Electron Device Letters, vol. 29, No.1, Jan. 21-23, 2008
  • D. K. Sengupta, S. L. Jackson, D. Ahmari, H. C. Kuo, J. I. Malin, S. Thomas, M. Feng, G. E. Stillman, Y. C. Chang, L. Li and, H. C. Liu "P-Type InGaAs/InP Quantum Well Infrared Photo-detector with Peak Response at 4.55 um," Appl. Phys. Lett vol. 69 no. 21, 18 Nov 1996.
  • M. Feng, C. L. Lau, and C. Ito, "A technique for correction of parasitic capacitance on microwave ft measurements of MESFET and HEMT devices," IEEE-MTT, vol. 39, 11 pp. 1880-1883, Nov. 1991.
  • L. J. Guido, K. C. Hsieh, N. Holonyak, Jr., R. W. Kaliski, V. K. Eu, M. Feng, and R. D. Burnham, "Impurity Induced Layer Disordering of Si-implanted AxGa1-xAs-GaAs Quantum Well Hetero-structures-Layer Disordering Via Diffusion from Extrinsic Dislocation Loops," J. of Appl. Phys. vol. 61, pp. 1329-1334, February 1987.
  • H. Kanber, M. Feng and J. M. Whelan, "Characterization of Ion Implantation Damage in Capless Annealed GaAs," 1983 MRS Symposium on Ion Implantation, vol. 27, 1984, pp. 365-370, Published by Elsevier Science Publishing Co., Inc.
  • M. Feng, V. K. Eu, I. J. D'Haenens, M. Braunstein, "Low Noise GaAs Field Effect Transistor made by Molecular Beam Epitaxy," Appl. Phys. Lett. vol. 41, pp. 633-635, 1982.